low temperature annealing
英 [ləʊ ˈtemprətʃə(r) əˈniːlɪŋ]
美 [loʊ ˈtemprətʃər əˈniːlɪŋ]
网络 低温退火
双语例句
- In the later evolution stage, using the low temperature Simulated Annealing ( SA) to individuals that the accuracy of the GA will be increased.
在进化后期对个体进行低温退火，提高遗传算法的求解精度。 - With less Fe, the substructure is formed during the low temperature stage of final annealing.
铁含量较少时，在成品退火的低温阶段，形成回复亚晶组织； - Effects of Low Temperature Annealing on the Corrosion Resistance of Pulse Electrodeposited Nanocrystalline Ni Coatings
低温退火对电沉积纳米晶Ni镀层耐蚀性的影响 - The adhesion of Ni-Si contact is improved by low temperature annealing.
通过烧结改善了Ni-Si接触，解决了Ni-Si接触电极的牢固度问题。 - Effect of low temperature annealing on transmittance of ITO thin film deposited on soft substrate
低温退火工艺对柔性基上ITO膜透光率的影响 - Study of Cold Deformation and Low Temperature Annealing Textures in Zr-Nb Alloy Sheet
锆铌合金冷变形与低温退火板织构的研究 - The effects of low temperature wet& nitrogen annealing on the interface of SiO_2-Si has been investigated by the high frequency C-V and quasi-static C-V techniques.
用高频CV和准静态C-V技术研究了低温湿氮退火对SiOzSi界面的影响。 - In low temperature homogeneous annealing, microstructure of multi-aluminum bronze are same to it's as-cast, and the alloy still possesses high strength, high hardness, but toughness has evidently declined trend.
低温均匀化退火态的组织仍为β′、α、γ2、K，该铝青铜低温退火下仍表现为强度、硬度高，冲击韧性有明显下降的趋势。 - The Formation of Shallow p~+ n Junction by Low Temperature Annealing
低温退火形成浅p~+n结 - The Effects of Low Temperature Wet-nitrogen Annealing on the Interface of SiO_2-Si
低温湿氮退火对SiO2-Si界面的影响 - The results demonstrated that mechanical properties changed slightly after annealing at low temperature ( 100~ 480 ℃), indicating that the effects of softening was not obvious at this annealing temperature;
研究表明，对不同加工硬化程度的试样，在低温状态（100～480℃）下退火后，力学性能基本不变，退火软化效果不明显； - Amorphous SiC ( a-SiC) films are deposited by pulse laser deposition ( PLD) with low laser energy fluence at low substrate temperature. The characteristics of crystallized SiC films by thermal annealing in vacuum and laser annealing respectively are studied.
本工作采用脉冲激光烧蚀沉积技术在低温和较低激光能量条件下沉积了非晶碳化硅（SiC）薄膜，对SiC薄膜的真空热退火和激光退火晶化特性进行了较系统研究。 - The results show that the higher pressure stress of ITO layer is the main factors causing the warp of ITO conductive coating thin glass, and the polycrystalline ITO film with low pressure stress can be fabricated by higher temperature annealing amorphous ITO film deposited at room temperature.
实验发现，ITO膜层的很高的压应力是导致导电膜玻璃翘曲的直接原因；采用室温沉积非晶ITO膜，然后经高温热退火可获得低膜压应力多晶相ITO膜。 - Application of the whole body low temperature annealing treatment in 4 000m 3 sphere bulk welding on entirety enterprise planning
整体低温退火热处理法在4000m3球罐施工中的应用 - Using the Solid phase crystallization process at low temperature annealing, the device quality polycrystal silicon films with large grains have been obtained from both n+ and I/ n+ type a-Si: H samples, which were made by the PECVD method.
从PECVD法制取的n~+与n/n~+两种结构的a-Si：H试样，采用低温退火固相晶化工艺，得到了满足器件质量要求的大晶粒多晶硅膜。 - During low temperature annealing step of IG process, a continuous linear raising of annealing temperature is used instead of the constant annealing temperature.
在本征吸除工艺的低温退火中，用连续的线性升温退火代替常规的恒温退火。 - Application of NITROGEN-METHYL alcohol cracking installation at low temperature to annealing of narrow steel strips
氮&甲醇低温裂解装置在窄带钢退火中的应用 - The Investigation and Improvement of Low Temperature Annealing Process in Intrinsic Gettering Technique
氧本征吸除低温退火工艺的研究和改进 - Presents the process mechanism of the whole body low temperature annealing treatment, and its application in eliminating the remnant stress of 2 large 4 000m 3 thin walled ammonia sphere bulk after welding in Zhongyuan Chemical Fertilizer Plant.
介绍整体低温退火热处理法的工艺原理及其在中原化肥厂2台4000m3薄壁大型氨球罐焊后消除焊接残余应力中的应用。 - The formation of oxygen precipitates and threading dislocations in top Si layer could be avoided by low temperature annealing.
低温退火可以避免在顶部硅层中氧沉淀及延伸位错等缺陷的形成。 - A novel low temperature switch material VO2 thin film was fabricated by ion-sputtering and annealing.
采用离子束溅射和退火工艺制备了一种新的相变型薄膜VO2。 - ITO films with low sheet resistance can be obtained by raising the substrate temperature during deposition or annealing in the inert gases at high temperature.
低电阻率的ITO膜可以通过提高沉积时的衬底温度或高温退火来获得。 - Research of Low Temperature Annealing and Plasma Treatment in Different Ambiences upon ITO Films By DC magnetron Sputtering
直流磁控溅射ITO薄膜的低温等离子退火研究 - The optimized low temperature annealing time for Laves phase Cr_2Nb synthesized by thermal solid phase reaction provide possibility for preparing both high strength and toughness Cr_2Nb alloy or Cr_2Nb-based composite with micro-/ nano-grains by a process of mechanical alloying followed by a hot pressing or sintering.
优化出的Cr2Nb固相热反应合成低温退火时间，为通过MA+热压（或烧结）工艺路线制备出具有微/纳米晶结构的高强高韧Cr2Nb合金或Cr2Nb基复合材料提供了可能性。 - The solid phase crystallization of the amorphous silicon films by low temperature annealing
非晶硅低温退火固相晶化的研究 - High-quality GaAs epilayer is obtained by employing the technologies of the tilted Si substrate, optimization the low temperature Al ( GaAs) As buffer layer and thermal cycle annealing.
通过探索有偏角衬底、Al（GaAs）As低温缓冲层和循环热退火等技术的最优条件，在Si衬底上外延生长出了高质量的GaAs材料。